Its characteristic properties are as follows: It is very useful in getting a higher breakdown voltage than a FET. It also has a high power value and high frequency with short multichannel. In comparison to FETs, it has a higher value of voltage breakdown. Static Induction Transistors (SITs): It is usually a vertically oriented device that comprises three terminals. At the input, the loss by this transistor is very negligible.The characteristic properties of IGBT are as follows: It consists of P–N–P–N which are four alternating layers that are governed by a Metal–Oxide–Semiconductor (MOS) gate structure. Insulated Gate Bipolar Transistors (IGBTs): It is a device that is mainly composed of semiconductor material and has three terminals in it. It does not require input current to work.It is also known as a voltage controller.The characteristics of a MOSFET are mentioned below: If the channel is wide, the transistor will work with high efficiency but if not, then it won’t work that efficiently. Its functionality is based on the width of a channel. It has three terminals which are as follows: Metal-oxide-semiconductor-field-effect Transistors (MOSFETs): It is a type of field-effect transistor. It is mainly used in high-power applications.It also has a high handling capability as well as a high current carrying capacity.It is large and therefore, it allows maximum current to flow through it.It has also two of its types that are mentioned below: It also has two junctions that are as follows: In it, the emitter is heavily doped while the base is moderately doped and the collector is doped lightly. It was invented in 1948 by William Shockley. It is mainly used to control current, and in this process, it acts in the amplification, on and off of the switch. It can either be utilized as an amplifier or as a switch.
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There are mainly four types of power transistors that are mentioned below as follows:īipolar Junction Transistors (BJTs): This is the type of transistor in which the capacity to handle two polarities is present. A power transistor is symbolically represented as follows:Īlso, read about Semiconductor Diode here Types of Power Transistors Learn more about Electrical Resistance here Power Transistor SymbolĪ power transistor is also a type of transistor so its symbol is that of a transistor. The first point-contact transistor was invented in 1947 by Walter Brattain, William Shockley, and John Bardeen. It is also available in different types with different power ranges. Power transistors can be either NPN or PNP polarity. It controls the voltage (or current) at the other pair of terminals.
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The specialty of a power transistor is when a voltage or current is applied to one of the terminals. This device is mainly designed to control the range of high current voltages of electrical devices. It has terminals of emitter, base, and collector. Power TransistorĪ power transistor is a three-terminal device that is composed of semiconductor materials. Read on, to know more about power transistors, their types, specifications, unit, working principle, and what are its applications in everyday life with FAQs.